Monolayer Graphene on SiO2-Si 90 nm

GRAPHENE FILM:

Growth method: CVD synthesis

Appearance (color): Transparent

Transparency:  97%

Coverage: 98%

Number of graphene layers: 1

Thickness (theoretical): 0.345 nm

FET Electron Mobility on Al2O3 passivated SiO2/Si: 6900 cm2 /Vs (doi: http://dx.doi.org/10.1063/1.4972847)

FET Electron Mobility on SiO/Si: 3760 cm2/Vs DOI: https://doi.org/10.1103/PhysRevLett.119.066802

Sheet Resistance on SiO/Si: 45040 Ohms/sq (1cm x1cm)

Grain size: Up to 20 m

Available Sizes:

6 Wafer

4 Wafer

10 mm x 10 mm

10 mm x 10 mm Pack of 4

1 inch x 1 inch