Monolayer Graphene on SiO2 Si 300 nm

GRAPHENE FILM:

• Growth method: CVD synthesis
• Appearance (color): Transparent
• Transparency: > 97%
• Coverage: > 95%
• Number of graphene layers: 1
• Thickness (theoretical): 0.345 nm
• FET Electron Mobility on Al2O3 passivated SiO2/Si: 6900 cm2 
• FET Electron Mobility on SiO2/Si: 3760 cm2
• Grain size: Up to 20 Um

Available Sizes:

4" Wafer

10 mm x 10 mm -Pack of 4

10 mm x 10 mm

1 inch x 1 inch