Monolayer Graphene on Cu

GRAPHENE FILM:

• Growth method: CVD synthesis
• Appearance (color): Transparent
• Transparency: > 97%
• Coverage: > 98%
• Number of graphene layers: 1
• Thickness (theoretical): 0345 nm
• FET Electron Mobility on Al2O3 passivated SiO2/Si: 6900 cm2 FET Electron Mobility on SiO2/Si: 3760 cm2 
• Sheet Resistance on SiO2/Si: 45040 Ohms/sq (1cm x1cm)
• Grain size: Up to 20m
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Available Sizes:

• 6 Wafer
• 4 Wafer
• 60 mm x 40 mm
• 10 mm x 10 mm Pack of 4
• 1 inch x 1 inch
• 12 mm Circular Pack of 4